Charge diffusion in the field-free region of charge-coupled devices

The potential well in back-illuminated charge-coupled devices (CCDs) does not reach all the way to the back surface. Hence, light that is absorbed in the field-free region generates electrons that can diffuse into neighboring pixels and thus decreases the spatial resolution of the sensor. We present data for the charge diffusion from a near point source by measuring the response of a back-illuminated CCD to light emitted from a submicron diameter glass fiber tip. The diffusion of electrons into neighboring pixels is analyzed for different wavelengths of light ranging from 430 to 780 nm. To find out how the charge spreading into other pixels depends on the location of the light spot; the fiber tip could be moved with a piezoelectric translation stage. The experimental data are compared to Monte Carlo simulations and an analytical model of electron diffusion in the field-free region. The presented analysis can be used to predict the charge diffusion in other back-illuminated sensors, and the experiment is universally applicable to measure any type of sensors

CCD detector performance for NOAO's wide-field MOSAIC cameras

In July of 1998 the National Optical Astronomy Observatories (NOAO) successfully upgraded MOSAIC 1, an 8192 by 8192 pixel array using eight Scientific Imaging Technologies, Inc. (SITe) St-002A thinned backside 2k by 4k charge coupled devices (CCDs). In July of 1999 MOSAIC II, a clone of MOSAIC I was commissioned also using eight SITe ST-002A CCDs. Additionally in December of 1998 NOAO implemented Mini- MOSAIC a 4096 by 4096 pixel array using two SITe ST-002A thinned CCDs. This report will discuss the performance, characterization and capabilities of the three wide field imagers now in operation at NOAO's Kitt Peak Observatory, Cerro Tololo Inter-American Observatory and at the WIYN Consortium 3.5-Meter telescope on Kitt Peak

CCD detector performance for NOAO's wide-field MOSAIC cameras

In July of 1998 the National Optical Astronomy Observatories (NOAO) successfully upgraded MOSAIC 1, an 8192 by 8192 pixel array using eight Scientific Imaging Technologies, Inc. (SITe) St-002A thinned backside 2k by 4k charge coupled devices (CCDs). In July of 1999 MOSAIC II, a clone of MOSAIC I was commissioned also using eight SITe ST-002A CCDs. Additionally in December of 1998 NOAO implemented Mini- MOSAIC a 4096 by 4096 pixel array using two SITe ST-002A thinned CCDs. This report will discuss the performance, characterization and capabilities of the three wide field imagers now in operation at NOAO's Kitt Peak Observatory, Cerro Tololo Inter-American Observatory and at the WIYN Consortium 3.5-Meter telescope on Kitt Peak

Advanced Technology Large-Aperture Space Telescope (ATLAST): A Technology Roadmap for the Next Decade

The Advanced Technology Large-Aperture Space Telescope (ATLAST) is a set of mission concepts for the next generation of UVOIR space observatory with a primary aperture diameter in the 8-m to 16-m range that will allow us to perform some of the most challenging observations to answer some of our most compelling questions, including "Is there life elsewhere in the Galaxy?" We have identified two different telescope architectures, but with similar optical designs, that span the range in viable technologies. The architectures are a telescope with a monolithic primary mirror and two variations of a telescope with a large segmented primary mirror. This approach provides us with several pathways to realizing the mission, which will be narrowed to one as our technology development progresses. The concepts invoke heritage from HST and JWST design, but also take significant departures from these designs to minimize complexity, mass, or both. Our report provides details on the mission concepts, shows the extraordinary scientific progress they would enable, and describes the most important technology development items. These are the mirrors, the detectors, and the high-contrast imaging technologies, whether internal to the observatory, or using an external occulter. Experience with JWST has shown that determined competitors, motivated by the development contracts and flight opportunities of the new observatory, are capable of achieving huge advances in technical and operational performance while keeping construction costs on the same scale as prior great observatories.Comment: 22 pages, RFI submitted to Astro2010 Decadal Committe

Current Oscillations in Long Zinc-Doped Silicon P-I-N Diodes

106 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1969.U of I OnlyRestricted to the U of I community idenfinitely during batch ingest of legacy ETD

Current oscillations in long Zn doped Si p-i-n diodes

Long Zn-doped Si p-i-n diodes exhibit large amplitude, sinusoidal, current oscillations in the positive resistance position of the I-V characteristic. These oscillations occur in the temperature range from ~150oK to ~2l0 oK. Over this temperature range, the frequency of oscillation varies nearly three orders of magnitude, from ~1 kHz to ~ 1MHz. Preceding the oscillations, these devices exhibit two-carrier space-change-limited conduction typical of long p-i-n diodes. This is interpreted in terms of the cube-law injected plasma theory of Lampert and Rose. It is shown that the critical parameter for the initiation of the oscillations is the presence of a minimum free carrier concentration in the intrinsic region. The solid solubility of Zn in Si is extended nearly two orders of magnitude over that previously known, to include the temperature range 800 o C to 1000 o C.U of I Onlythesi

Dynamic CCD pixel depletion edge model and the effects on dark current production

The depletion edge in Charge-Coupled Devices (CCD) pixels is dependent upon the amount of signal charge located within the depletion region. A model is presented that describes the movement of the depletion edge with increasing signal charge. This dynamic depletion edge is shown to have an effect on the amount of dark current produced by some pixels. Modeling the dark current behavior of pixels both with and without impurities over an entire imager demonstrates that this moving depletion edge has a significant effect on a subset of the pixels. Dark current collected by these pixels is shown to behave nonlinearly with respect to exposure time and additionally the dark current is affected by the presence of illumination. The model successfully predicts unexplained aspects of dark current behavior previously observed in some CCD sensors

Dark current modeling with a moving depletion edge

Within a pixel in a digital imager, generally either a chargecoupled device or complementary metal oxide semiconductor device, doping of the semiconductor substrate and application of gate voltages create a region free of mobile carriers called the depletion region. This region fills with charge after incoming photons or thermal energy raise the charges from the valence to the conduction energy band. As the signal charge fills the depletion region, the electric field generating the region is altered, and the size of the region is reduced. We present a model that describes how this dynamic depletion region, along with the location of impurities, will result in pixels that produce less dark current after being exposed to light and additionally show nonlinear production rates with respect to exposure time. These types of effects have been observed in digital imagers, allowing us to compare empirical data with the modeled data

Temperature dependence of dark current in a CCD

We present data for dark current of a back-illuminated CCD over the temperature range of 222 to 291 K. Using an Arrhenius law, we found that the analysis of the data leads to the relation between the prefactor and the apparent activation energy as described by the Meyer-Neldel rule. However, a more detailed analysis shows that the activation energy for the dark current changes in the temperature range investigated. This transition can be explained by the larger relative importance at high temperatures of the diffusion dark current and at low temperatures by the depletion dark current. The diffusion dark current, characterized by the band gap of silicon, is uniform for all pixels. At low temperatures, the depletion dark current, characterized by half the band gap, prevails, but it varies for different pixels. Dark current spikes are pronounced at low temperatures and can be explained by large concentrations of deep level impurities in those particular pixels. We show that fitting the data with the impurity concentration as the only variable can explain the dark current characteristics of all the pixels on the chip

PSF Measurements on Back-Illuminated CCDs

The spatial resolution of an optical device is generally characterized by either the Point Spread Function (PSF) or the Modulation Transfer Function (MTF). To directly obtain the PSF one needs to measure the response of an optical system to a point light source. We present data that show the response of a back-illuminated CCD to light emitted from a sub-micron diameter glass fiber tip. The potential well in back-illuminated CCD s does not reach all the way to the back surface. Hence, light that is absorbed in the field-free region generates electrons that can diffuse into other pixels. We analyzed the diffusion of electrons into neighboring pixels for different wavelengths of light ranging from blue to near infrared. To find out how the charge spreading into other pixels depends on the location of the light spot, the fiber tip could be moved with a piezo-electric translation stage. The experimental data are compared to Monte Carlo simulations and an analytical model of electron diffusion in the field-free region